Effect of deposition temperature on the structure, magnetic and transport properties in CoMnSi Heusler films.

The various CoMnSi films, from chemical ordered L2 state to completely disordered amorphous state, were prepared on glass substrates with different deposition/annealing temperatures. The influence of deposition/annealing temperature on the crystallographic defects and atomic disorders, and further on the magnetic and transport properties of the CoMnSi films were investigated in detail. The decrease in crystallinity leads to the structure disorder, spin disorder and further the reduction of magnetization as well as the increase of residual resistivity. The dominant source in anomalous Hall effect for the polycrystalline samples is the skew scattering, while the skew scattering coefficient a becomes larger with the increasing deposition temperature, due to the increase of skew scattering center introduced by the increasing structure disorder. [ABSTRACT FROM AUTHOR]