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Band alignment of atomic layer deposited high-k Al2O3/multilayer MoS2 interface determined by X-ray photoelectron spectroscopy.
- Source :
-
Journal of Alloys & Compounds . Nov2015, Vol. 650, p502-507. 6p. - Publication Year :
- 2015
-
Abstract
- The energy band alignment between Al 2 O 3 /multilayer (ML)-MoS 2 was characterized using high-resolution x -ray photoelectron spectroscopy (XPS). The Al 2 O 3 was deposited using an atomic layer deposition (ALD) tool. A valence band offset of 4.10 eV and a conduction band offset of 3.41 eV were obtained across the ALD-Al 2 O 3 /ML-MoS 2 interface. For comparison, the valence band offset and a conduction band offset were also obtained for ALD-SiO 2 /ML-MoS 2 interface. It was found out that ALD-Al 2 O 3 /ML-MoS 2 interface has a larger conduction band offset, compared to that of ALD-SiO 2 /ML-MoS 2 interface, which indicate ALD-Al 2 O 3 served as the gate dielectric for n-type ML-MoS 2 based field effect transistors has advantage over ALD-SiO 2 in term of suppressing the gate leakage current. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 09258388
- Volume :
- 650
- Database :
- Academic Search Index
- Journal :
- Journal of Alloys & Compounds
- Publication Type :
- Academic Journal
- Accession number :
- 109501608
- Full Text :
- https://doi.org/10.1016/j.jallcom.2015.07.207