Effect of field dependent trap occupancy on organic thin film transistor characteristics.

A model to calculate the current voltage characteristics of organic thin film transistors is presented. The model takes into account the influence of high electric field on trap occupancy. The case of the traps at a single energy level is considered in detail. Relevant equations are solved numerically using an iteration method. The field dependent trap occupancy model is found to change free surface charge Q[sub sf] and drain saturation current I[sub d] significantly. The model is compared with the experimental data published by two different groups. There is good agreement between experimental data and our model. © 2003 American Institute of Physics. [ABSTRACT FROM AUTHOR]