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A unified MOSFET channel charge model for device modeling in circuit simulation.
- Source :
-
IEEE Transactions on Computer-Aided Design of Integrated Circuits & Systems . Aug98, Vol. 17 Issue 8, p641. 4p. 4 Black and White Photographs, 5 Graphs. - Publication Year :
- 1998
-
Abstract
- Provides information on a study that presents a simple and accurate MOSFET channel charge model for device modeling in circuit simulation. Model presentation; Comparison and discussion between the model and the measured data from devices at different bias and design conditions; Summary.
- Subjects :
- *METAL oxide semiconductor field-effect transistors
*EXAMPLE
Subjects
Details
- Language :
- English
- ISSN :
- 02780070
- Volume :
- 17
- Issue :
- 8
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Computer-Aided Design of Integrated Circuits & Systems
- Publication Type :
- Academic Journal
- Accession number :
- 1098478
- Full Text :
- https://doi.org/10.1109/43.712096