Cite
Simulation Study of the Impact of Quantum Confinement on the Electrostatically Driven Performance of n-type Nanowire Transistors.
MLA
Wang, Yijiao, et al. “Simulation Study of the Impact of Quantum Confinement on the Electrostatically Driven Performance of N-Type Nanowire Transistors.” IEEE Transactions on Electron Devices, vol. 62, no. 10, Oct. 2015, pp. 3229–36. EBSCOhost, https://doi.org/10.1109/TED.2015.2470235.
APA
Wang, Y., Al-Ameri, T., Wang, X., Georgiev, V. P., Towie, E., Amoroso, S. M., Brown, A. R., Cheng, B., Reid, D., Riddet, C., Shifren, L., Sinha, S., Yeric, G., Aitken, R., Liu, X., Kang, J., & Asenov, A. (2015). Simulation Study of the Impact of Quantum Confinement on the Electrostatically Driven Performance of n-type Nanowire Transistors. IEEE Transactions on Electron Devices, 62(10), 3229–3236. https://doi.org/10.1109/TED.2015.2470235
Chicago
Wang, Yijiao, Talib Al-Ameri, Xingsheng Wang, Vihar P. Georgiev, Ewan Towie, Salvatore Maria Amoroso, Andrew R. Brown, et al. 2015. “Simulation Study of the Impact of Quantum Confinement on the Electrostatically Driven Performance of N-Type Nanowire Transistors.” IEEE Transactions on Electron Devices 62 (10): 3229–36. doi:10.1109/TED.2015.2470235.