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The doping effect on the properties of zinc oxide (ZnO) thin layers for photovoltaic applications.
- Source :
-
International Journal of Hydrogen Energy . Oct2015, Vol. 40 Issue 39, p13685-13689. 5p. - Publication Year :
- 2015
-
Abstract
- In this study, we experimentally elaborated Copper- and Indium-doped Zinc Oxide (Cu: ZnO and In: ZnO) thin films at different temperatures (T 1 = 480 °C and T 2 = 520 °C), the doping ratio were varied between 0% and 8%. Using a low cost solution-based chemical deposition, we have developed a ZnO thin film deposition process that offers fine-control of the surface morphology. It consists in spraying a volatile compound of the material to be deposited on a substrate maintained at high temperature to cause a chemical reaction in order to form at least one solid product. Therefore, the proposed ZnO doped layer is highly promising for applications for the next-generation solar cells. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 03603199
- Volume :
- 40
- Issue :
- 39
- Database :
- Academic Search Index
- Journal :
- International Journal of Hydrogen Energy
- Publication Type :
- Academic Journal
- Accession number :
- 109914890
- Full Text :
- https://doi.org/10.1016/j.ijhydene.2015.02.075