Magnetism in nanocrystalline SiC films.

Magnetism been studied in two series of nanocrystalline SiC films obtained by the method of direct deposition of ions with an energy of ~100 eV at temperatures 1150 °С and 1200 °С. There were separated the contributions of diamagnetism, paramagnetism and superparamagnetism+ferromagnetism. Magnetization value of the films correlates with the deposition temperature. In the films deposited at higher temperatures the value of magnetization was by 1.5 times lower. It was concluded that induced magnetism in nanocrystalline SiC films is caused by interaction of magnetic moments of neutral V Si V C divacancies in separate nanocrystals. The estimated concentration of neutral V Si V C divacancies in nanocrystalline SiC films is ~10 20 сm −3 . [ABSTRACT FROM AUTHOR]