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Temperature-dependent optical measurements of the dominant recombination mechanisms in InAs/InAsSb type-2 superlattices.
- Source :
-
Journal of Applied Physics . 2015, Vol. 118 Issue 12, p125701-1-125701-9. 9p. 2 Charts, 7 Graphs. - Publication Year :
- 2015
-
Abstract
- Temperature-dependent measurements of carrier recombination rates using a time-resolved optical pump-probe technique are reported for mid-wave infrared InAs/InAs1–xSbx type-2 superlattices (T2SLs). By engineering the layer widths and alloy compositions, a 16K band-gap of ~235±10 meV was achieved for five unintentionally and four intentionally doped T2SLs. Carrier lifetimes were determined by fitting lifetime models based on Shockley-Read-Hall (SRH), radiative, and Auger recombination processes to the temperature and excess carrier density dependent data. The minority carrier (MC), radiative, and Auger lifetimes were observed to generally increase with increasing antimony content and decreasing layer thickness for the unintentionally doped T2SLs. The MC lifetime is limited by SRH processes at temperatures below 200K in the unintentionally doped T2SLs. The extracted SRH defect energy levels were found to be near mid-bandgap. Also, it is observed that the MC lifetime is limited by Auger recombination in the intentionally doped T2SLs with doping levels greater than n~1016 cm–3. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 118
- Issue :
- 12
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 110074462
- Full Text :
- https://doi.org/10.1063/1.4931419