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Low temperature carrier transport study of monolayer MoS2 field effect transistors prepared by chemical vapor deposition under an atmospheric pressure.
- Source :
-
Journal of Applied Physics . 2015, Vol. 118 Issue 12, p124506-1-124506-7. 7p. 5 Graphs. - Publication Year :
- 2015
-
Abstract
- Large size monolayer Molybdenum disulphide (MoS2) was successfully grown by chemical vapor deposition method under an atmospheric pressure. The electrical transport properties of the fabricated back-gate monolayer MoS2 field effect transistors (FETs) were investigated under low temperatures; a peak field effect mobility of 59 cm2V–1s–1 was achieved. With the assist of Raman measurement under low temperature, this work identified the mobility limiting factor for the monolayer MoS2 FETs: homopolar phonon scattering under low temperature and electron-polar optical phonon scattering at room temperature. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 118
- Issue :
- 12
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 110074490
- Full Text :
- https://doi.org/10.1063/1.4931617