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Full-zone spectral envelope function formalism for the optimization of line and point tunnel field-effect transistors.
- Source :
-
Journal of Applied Physics . 2015, Vol. 118 Issue 13, p134502-1-134502-7. 7p. 2 Diagrams, 3 Charts, 4 Graphs. - Publication Year :
- 2015
-
Abstract
- Efficient quantum mechanical simulation of tunnel field-effect transistors (TFETs) is indispensable to allow for an optimal configuration identification. We therefore present a full-zone 15-band quantum mechanical solver based on the envelope function formalism and employing a spectral method to reduce computational complexity and handle spurious solutions. We demonstrate the versatility of the solver by simulating a 40 nm wide In0.53Ga0.47As lineTFET and comparing it to p-n-i-n configurations with various pocket and body thicknesses. We find that the lineTFET performance is not degraded compared to semi-classical simulations. Furthermore, we show that a suitably optimized p-n-i-n TFET can obtain similar performance to the lineTFET. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 118
- Issue :
- 13
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 110208641
- Full Text :
- https://doi.org/10.1063/1.4931890