Reduction of Thermal Resistance and Optical Power Loss Using Thin-Film Light-Emitting Diode (LED) Structure.

In this paper, a GaN light-emitting diode (LED) with sapphire structure and a thin-film LED without sapphire structure are characterized in the photoelectrothermal modeling framework for comparison. Starting from the analysis and modeling of internal quantum efficiency as a function of current and temperature of blue LED, this work develops the thin-film LED device model and derives its optical power and the heat dissipation coefficient. The device parameters of the two LED devices with different structural designs are then compared. Practical optical power measurements are compared with theoretical predictions based on the two types of fabricated devices. It is shown that the thin-film LED device has much lower thermal resistance and optical power loss. [ABSTRACT FROM PUBLISHER]