Cite
Effect of reset voltage polarity on the resistive switching region of unipolar memory.
MLA
Wang, Zhongqiang, et al. “Effect of Reset Voltage Polarity on the Resistive Switching Region of Unipolar Memory.” Physica Status Solidi. A: Applications & Materials Science, vol. 212, no. 10, Oct. 2015, pp. 2255–61. EBSCOhost, https://doi.org/10.1002/pssa.201532235.
APA
Wang, Z., Xu, H., Zhao, X., Lin, Y., Zhang, L., Ma, J., & Liu, Y. (2015). Effect of reset voltage polarity on the resistive switching region of unipolar memory. Physica Status Solidi. A: Applications & Materials Science, 212(10), 2255–2261. https://doi.org/10.1002/pssa.201532235
Chicago
Wang, Zhongqiang, Haiyang Xu, Xiaoning Zhao, Ya Lin, Lei Zhang, Jiangang Ma, and Yichun Liu. 2015. “Effect of Reset Voltage Polarity on the Resistive Switching Region of Unipolar Memory.” Physica Status Solidi. A: Applications & Materials Science 212 (10): 2255–61. doi:10.1002/pssa.201532235.