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160-A bulk GaN Schottky diode array.
- Source :
-
Applied Physics Letters . 10/13/2003, Vol. 83 Issue 15, p3192. 3p. 2 Diagrams, 2 Graphs. - Publication Year :
- 2003
-
Abstract
- Pt Schottky rectifier arrays were fabricated on 200-μm-thick, freestanding GaN layers. Even with the reduced dislocation density in these layers (∼10[sup 5] cm[sup -2]) relative to conventional GaN on sapphire (>10[sup 8] cm[sup -2]), rectifiers fabricated on the freestanding GaN show a strong dependence of reverse breakdown on contact diameter. We show that by interconnecting the output of many (∼130) smaller (500 μm×500 μm) rectifiers, we can achieve high total forward output current (161 A at 7.12 V), low forward turn-on voltage of ∼3 V, and maintain the reverse breakdown voltage. The on/off ratio of the rectifier array was ∼8×10[sup 7] at 5 V/-100 V. © 2003 American Institute of Physics. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 83
- Issue :
- 15
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 11028748
- Full Text :
- https://doi.org/10.1063/1.1618022