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Density-dependent electron transport and precise modeling of GaN high electron mobility transistors.

Authors :
Bajaj, Sanyam
Shoron, Omor F.
Pil Sung Park
Krishnamoorthy, Sriram
Akyol, Fatih
Ting-Hsiang Hung
Reza, Shahed
Chumbes, Eduardo M.
Khurgin, Jacob
Rajan, Siddharth
Source :
Applied Physics Letters. 10/12/2015, Vol. 107 Issue 15, p1-4. 4p. 2 Diagrams, 5 Graphs.
Publication Year :
2015

Abstract

We report on the direct measurement of two-dimensional sheet charge density dependence of electron transport in AlGaN/GaN high electron mobility transistors (HEMTs). Pulsed IV measurements established increasing electron velocities with decreasing sheet charge densities, resulting in saturation velocity of 1.9 × 107 cm/s at a low sheet charge density of 7.8 × 1011 cm-2. An optical phonon emission-based electron velocity model for GaN is also presented. It accommodates stimulated longitudinal optical (LO) phonon emission which clamps the electron velocity with strong electron-phonon interaction and long LO phonon lifetime in GaN. A comparison with the measured density-dependent saturation velocity shows that it captures the dependence rather well. Finally, the experimental result is applied in TCAD-based device simulator to predict DC and small signal characteristics of a reported GaN HEMT. Good agreement between the simulated and reported experimental results validated the measurement presented in this report and established accurate modeling of GaN HEMTs. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00036951
Volume :
107
Issue :
15
Database :
Academic Search Index
Journal :
Applied Physics Letters
Publication Type :
Academic Journal
Accession number :
110422651
Full Text :
https://doi.org/10.1063/1.4933181