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Switchable photovoltaic and polarization modulated rectification in Si-integrated Pt/(Bi0.9Sm0.1)(Fe0.97Hf0.03)O3/LaNiO3 heterostructures.
- Source :
-
Applied Physics Letters . 10/19/2015, Vol. 107 Issue 16, p1-5. 5p. 1 Chart, 4 Graphs. - Publication Year :
- 2015
-
Abstract
- We studied switchable photovoltaic and photo-diode characteristics of Pt/(Bi0.9Sm0.1)(Fe0.97Hf0.03)O3/ LaNiO3 (Pt/BSFHO/LNO) heterostructures integrated on Si (100). The directions of photocurrent (JSC) and rectification are found to be reversibly switchable after applying external poling voltages. In pristine state, metal-ferroelectric-metal capacitor Pt/BSFHO/LNO shows JSC ~32 µA/cm² and VOC ~ 0.04 V, which increase to maximum value of JSC ~ 303 (-206) µA/cm² and VOC ~-0.32 (0.26) V after upward (downward) poling at ±8 V. We believe that Schottky barrier modulation by polarization flipping at Pt/BSFHO interface could be a main driving force behind switchable photovoltaic and rectifying diode characteristics of Pt/BSFHO/LNO heterostructures. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 107
- Issue :
- 16
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 110543005
- Full Text :
- https://doi.org/10.1063/1.4934665