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Suppression of current collapse by hole injection from drain in a normallyoff GaN-based hybrid-drain-embedded gate injection transistor.
- Source :
-
Applied Physics Letters . 10/19/2015, Vol. 107 Issue 16, p1-4. 4p. 2 Diagrams, 1 Chart, 4 Graphs. - Publication Year :
- 2015
-
Abstract
- Current collapse is suppressed up to 800V of drain voltage in our proposed device, Hybrid-Drainembedded Gate Injection Transistor (HD-GIT), where an additional p-GaN layer is grown on the AlGaN barrier layer and is connected to the drain electrode. We present, based on a device simulation and electroluminescence study, that the hole injection from the additional drain-side p-GaN at the OFF state compensates the hole emission in the epilayer. As a result, the gate-drain access region is not negatively charged at the OFF state, resulting in the drastic suppression of current collapse in HD-GIT. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 107
- Issue :
- 16
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 110543022
- Full Text :
- https://doi.org/10.1063/1.4934184