Cite
Investigation of Forming, SET, and Data Retention of Conductive-Bridge Random-Access Memory for Stack Optimization.
MLA
Guy, Jeremy, et al. “Investigation of Forming, SET, and Data Retention of Conductive-Bridge Random-Access Memory for Stack Optimization.” IEEE Transactions on Electron Devices, vol. 62, no. 11, Nov. 2015, pp. 3482–89. EBSCOhost, https://doi.org/10.1109/TED.2015.2476825.
APA
Guy, J., Molas, G., Blaise, P., Bernard, M., Roule, A., Le Carval, G., Delaye, V., Toffoli, A., Ghibaudo, G., Clermidy, F., De Salvo, B., & Perniola, L. (2015). Investigation of Forming, SET, and Data Retention of Conductive-Bridge Random-Access Memory for Stack Optimization. IEEE Transactions on Electron Devices, 62(11), 3482–3489. https://doi.org/10.1109/TED.2015.2476825
Chicago
Guy, Jeremy, Gabriel Molas, Philippe Blaise, Mathieu Bernard, Anne Roule, Gilles Le Carval, Vincent Delaye, et al. 2015. “Investigation of Forming, SET, and Data Retention of Conductive-Bridge Random-Access Memory for Stack Optimization.” IEEE Transactions on Electron Devices 62 (11): 3482–89. doi:10.1109/TED.2015.2476825.