Cite
Noise-Induced Resistance Broadening in Resistive Switching Memory—Part II: Array Statistics.
MLA
Ambrogio, Stefano, et al. “Noise-Induced Resistance Broadening in Resistive Switching Memory—Part II: Array Statistics.” IEEE Transactions on Electron Devices, vol. 62, no. 11, Nov. 2015, pp. 3812–19. EBSCOhost, https://doi.org/10.1109/TED.2015.2477135.
APA
Ambrogio, S., Balatti, S., McCaffrey, V., Wang, D. C., & Ielmini, D. (2015). Noise-Induced Resistance Broadening in Resistive Switching Memory—Part II: Array Statistics. IEEE Transactions on Electron Devices, 62(11), 3812–3819. https://doi.org/10.1109/TED.2015.2477135
Chicago
Ambrogio, Stefano, Simone Balatti, Vincent McCaffrey, Daniel C. Wang, and Daniele Ielmini. 2015. “Noise-Induced Resistance Broadening in Resistive Switching Memory—Part II: Array Statistics.” IEEE Transactions on Electron Devices 62 (11): 3812–19. doi:10.1109/TED.2015.2477135.