Electrodeposition of CuInxGa1−xSe2 thin films via pulse technique from Ionic liquid containing n-propyl alcohol.

Stoichiometric Cu 1.00 In 0.51 Ga 0.1 Se 2.04 (CIGS) thin films containing Cu(II), In(III), Ga(III) and Se(IV) are obtained for the first time in ionic liquid/n-propyl alcohol mixtures with controlled pulse electrodeposition parameters at 323 K. The effects of deposition current density, deposition time, frequency and duty cycle are studied in detail. The band gap of obtained CuIn x Ga 1− x Se 2 (CIGS) thin film are approximately 1.35 eV, as measured using UV–visible absorption spectra. The interplanar spacing and average Hall coefficient of the CIGS thin films are approximately 3.315 Å and 1.011×10 −1 cm 3 /C, respectively. [ABSTRACT FROM AUTHOR]