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Use of high-granularity CdZnTe pixelated detectors to correct response non-uniformities caused by defects in crystals.

Authors :
Bolotnikov, A.E.
Camarda, G.S.
Cui, Y.
De Geronimo, G.
Eger, J.
Emerick, A.
Fried, J.
Hossain, A.
Roy, U.
Salwen, C.
Soldner, S.
Vernon, E.
Yang, G.
James, R.B.
Source :
Nuclear Instruments & Methods in Physics Research Section A. Jan2016, Vol. 805, p41-54. 14p.
Publication Year :
2016

Abstract

Following our successful demonstration of the position-sensitive virtual Frisch-grid detectors, we investigated the feasibility of using high-granularity position sensing to correct response non-uniformities caused by the crystal defects in CdZnTe (CZT) pixelated detectors. The development of high-granularity detectors able to correct response non-uniformities on a scale comparable to the size of electron clouds opens the opportunity of using unselected off-the-shelf CZT material, whilst still assuring high spectral resolution for the majority of the detectors fabricated from an ingot. Here, we present the results from testing 3D position-sensitive 15×15×10 mm 3 pixelated detectors, fabricated with conventional pixel patterns with progressively smaller pixel sizes: 1.4, 0.8, and 0.5 mm. We employed the readout system based on the H3D front-end multi-channel ASIC developed by BNL's Instrumentation Division in collaboration with the University of Michigan. We use the sharing of electron clouds among several adjacent pixels to measure locations of interaction points with sub-pixel resolution. By using the detectors with small-pixel sizes and a high probability of the charge-sharing events, we were able to improve their spectral resolutions in comparison to the baseline levels, measured for the 1.4-mm pixel size detectors with small fractions of charge-sharing events. These results demonstrate that further enhancement of the performance of CZT pixelated detectors and reduction of costs are possible by using high spatial-resolution position information of interaction points to correct the small-scale response non-uniformities caused by crystal defects present in most devices. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
01689002
Volume :
805
Database :
Academic Search Index
Journal :
Nuclear Instruments & Methods in Physics Research Section A
Publication Type :
Academic Journal
Accession number :
110821615
Full Text :
https://doi.org/10.1016/j.nima.2015.08.051