Determination of the effective mass and nanoscale electrical transport in La-doped BaSnO3 thin films.

Epitaxial La-doped BaSnO 3 thin films were grown by radio-frequency (RF) magnetron sputtering technique on (LaAlO 3 ) 0.3 (SrAl 0.5 Ta 0.5 O 3 ) 0.7 (001) substrates. The n -type degenerate semiconductor was demonstrated in the La-doped BaSnO 3 thin film from Hall-effect measurement, and its electron effective mass ∼0.396 m 0 ( m 0 , the free electron mass) was determined from combined Seebeck coefficient and carrier density. Additionally, the local current–voltage curve measured using conductive atomic force microscopy exhibits non-linear characteristic and the transport mechanism at high bias is found to be the Fowler-Nordheim tunneling. [ABSTRACT FROM AUTHOR]