Cite
Nonvolatile and Robust Design of Content Addressable Memory Cell Using Magnetic Tunnel Junction at Nanoscale Regime.
MLA
Dwivedi, Amit Krishna, and Aminul Islam. “Nonvolatile and Robust Design of Content Addressable Memory Cell Using Magnetic Tunnel Junction at Nanoscale Regime.” IEEE Transactions on Magnetics, vol. 51, no. 12, Dec. 2015, pp. 1–13. EBSCOhost, https://doi.org/10.1109/TMAG.2015.2454477.
APA
Dwivedi, A. K., & Islam, A. (2015). Nonvolatile and Robust Design of Content Addressable Memory Cell Using Magnetic Tunnel Junction at Nanoscale Regime. IEEE Transactions on Magnetics, 51(12), 1–13. https://doi.org/10.1109/TMAG.2015.2454477
Chicago
Dwivedi, Amit Krishna, and Aminul Islam. 2015. “Nonvolatile and Robust Design of Content Addressable Memory Cell Using Magnetic Tunnel Junction at Nanoscale Regime.” IEEE Transactions on Magnetics 51 (12): 1–13. doi:10.1109/TMAG.2015.2454477.