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High-Efficiency 312-kVA Three-Phase Inverter Using Parallel Connection of Silicon Carbide MOSFET Power Modules.
- Source :
-
IEEE Transactions on Industry Applications . Nov2015 Part 1, Vol. 51 Issue 6, p4664-4676. 13p. - Publication Year :
- 2015
-
Abstract
- This paper presents the design process of a 312-kVA three-phase silicon carbide inverter using ten parallel-connected metal–oxide–semiconductor field-effect-transistor power modules in each phase leg. The design processes of the gate-drive circuits with short-circuit protection and power circuit layout are also presented. Measurements in order to evaluate the performance of the gate-drive circuits have been performed using a double-pulse setup. Moreover, electrical and thermal measurements in order to evaluate the transient performance and steady-state operation of the parallel-connected power modules are shown. Experimental results showing proper steady-state operation of the power converter are also presented. Taking into account measured data, an efficiency of approximately 99.3% at the rated power has been measured for the inverter. [ABSTRACT FROM PUBLISHER]
Details
- Language :
- English
- ISSN :
- 00939994
- Volume :
- 51
- Issue :
- 6
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Industry Applications
- Publication Type :
- Academic Journal
- Accession number :
- 111152737
- Full Text :
- https://doi.org/10.1109/TIA.2015.2456422