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Compact Modeling of RRAM Devices and Its Applications in 1T1R and 1S1R Array Design.
- Source :
-
IEEE Transactions on Electron Devices . Dec2015, Vol. 62 Issue 12, p4022-4028. 7p. - Publication Year :
- 2015
-
Abstract
- In this paper, we present a compact model for metal–oxide-based resistive random access memory (RRAM) devices with bipolar switching characteristics. The switching mechanism relies on the dynamics of conductive filament growth/dissolution in the oxide layer. Besides the dc and pulsed $I$ – $V$ characteristics, the model also captures the RRAM retention property and the temperature dynamics. The model parameters and the device variations are calibrated from the experimental data of IMEC HfOx-based RRAM devices. The model has been implemented in Verilog-A, which can be easily adapted into the SPICE simulator for the circuit-level analysis. As case studies, we demonstrate the model’s applications on the programming scheme design of the 1-transistor-1-resistor array, as well as the design space exploration of the 1-selector-1-resistor cross-point array toward megabit-level. [ABSTRACT FROM PUBLISHER]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 62
- Issue :
- 12
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 111177447
- Full Text :
- https://doi.org/10.1109/TED.2015.2492421