Cite
An Accurate Physics-Based Compact Model for Dual-Gate Bilayer Graphene FETs.
MLA
Aguirre-Morales, Jorge-Daniel, et al. “An Accurate Physics-Based Compact Model for Dual-Gate Bilayer Graphene FETs.” IEEE Transactions on Electron Devices, vol. 62, no. 12, Dec. 2015, pp. 4333–39. EBSCOhost, https://doi.org/10.1109/TED.2015.2487243.
APA
Aguirre-Morales, J.-D., Fregonese, S., Mukherjee, C., Maneux, C., & Zimmer, T. (2015). An Accurate Physics-Based Compact Model for Dual-Gate Bilayer Graphene FETs. IEEE Transactions on Electron Devices, 62(12), 4333–4339. https://doi.org/10.1109/TED.2015.2487243
Chicago
Aguirre-Morales, Jorge-Daniel, Sebastien Fregonese, Chhandak Mukherjee, Cristell Maneux, and Thomas Zimmer. 2015. “An Accurate Physics-Based Compact Model for Dual-Gate Bilayer Graphene FETs.” IEEE Transactions on Electron Devices 62 (12): 4333–39. doi:10.1109/TED.2015.2487243.