Cite
Design of a 700 V DB-nLDMOS Based on Substrate Termination Technology.
MLA
Qiao, Ming, et al. “Design of a 700 V DB-NLDMOS Based on Substrate Termination Technology.” IEEE Transactions on Electron Devices, vol. 62, no. 12, Dec. 2015, pp. 4121–27. EBSCOhost, https://doi.org/10.1109/TED.2015.2491324.
APA
Qiao, M., Yu, L., Dai, G., Ye, K., Wang, Y., Li, Z., & Zhang, B. (2015). Design of a 700 V DB-nLDMOS Based on Substrate Termination Technology. IEEE Transactions on Electron Devices, 62(12), 4121–4127. https://doi.org/10.1109/TED.2015.2491324
Chicago
Qiao, Ming, Liangliang Yu, Gang Dai, Ke Ye, Yuru Wang, Zhaoji Li, and Bo Zhang. 2015. “Design of a 700 V DB-NLDMOS Based on Substrate Termination Technology.” IEEE Transactions on Electron Devices 62 (12): 4121–27. doi:10.1109/TED.2015.2491324.