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Ion-Implanted TiN Metal Gate With Dual Band-Edge Work Function and Excellent Reliability for Advanced CMOS Device Applications.
- Source :
-
IEEE Transactions on Electron Devices . Dec2015, Vol. 62 Issue 12, p4199-4205. 7p. - Publication Year :
- 2015
-
Abstract
- This paper proposed, for the first time, that the dual band-edge effective work functions are achieved by employing a single metal gate (MG) and single high- $k$ (HK) dielectric via ion implantation into a TiN MG for HP CMOS device applications under a gate-last process flow. The P/BF2 ion-implanted TiN/HfO2/ILSiO2 gate-stack does not degrade the gate leakage, reliability, and carrier mobility, and reduces the effective oxide thickness. The impact of P/BF2 ion implant energy, dose, and TiN gate thickness on the properties of implanted TiN/HfO2/ILSiO2 gate-stack is studied, and the corresponding possible mechanisms are discussed. This technique has been successfully applied to the replacement MG and HK/MG last process flow to fabricate HP CMOSFETs and CMOS 32 frequency dividers with a minimum gate length of 25 nm. [ABSTRACT FROM PUBLISHER]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 62
- Issue :
- 12
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 111177474
- Full Text :
- https://doi.org/10.1109/TED.2015.2494080