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Nanoscale-RingFET: An Analytical Drain Current Model Including SCEs.
- Source :
-
IEEE Transactions on Electron Devices . Dec2015, Vol. 62 Issue 12, p3965-3972. 8p. - Publication Year :
- 2015
-
Abstract
- In this paper, using a 2-D Poisson equation (in cylindrical coordinates), an analytical drain current model of a nanoscale RingFET architecture has been developed for the first time. Major short-channel effects, such as channel length modulation, velocity scattering, and drain-induced barrier lowering, are taken under consideration while developing the model. A bandgap narrowing model has been employed to investigate the impact of higher channel doping. The modeled results of the surface potential, electric field, threshold voltage ( V\mathrm{ th} ), subthreshold slope, and drain current have been verified by comparing with those of the ATLAS 3-D device simulation. The influence of the drain radius and position of the source/drain regions on the electrical characteristics of the device has also been demonstrated. [ABSTRACT FROM PUBLISHER]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 62
- Issue :
- 12
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 111177479
- Full Text :
- https://doi.org/10.1109/TED.2015.2493578