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Performance enhancement of planar heterojunction perovskite solar cells by n-doping of the electron transporting layer.
- Source :
-
Chemical Communications . 12/21/2015, Vol. 51 Issue 98, p17413-17416. 4p. - Publication Year :
- 2015
-
Abstract
- Herein we report a simple n-doping method to enhance the performance of perovskite solar cells with a planar heterojunction structure. Devices with an n-doped PCBM electron transporting layer exhibit a power conversion efficiency of 13.8% with a remarkably enhanced short-circuit current of 22.0 mA cm−2 as compared to the devices with an un-doped PCBM layer. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 13597345
- Volume :
- 51
- Issue :
- 98
- Database :
- Academic Search Index
- Journal :
- Chemical Communications
- Publication Type :
- Academic Journal
- Accession number :
- 111197846
- Full Text :
- https://doi.org/10.1039/c5cc05253j