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Comparison of NBTI aging on adder architectures and ring oscillators in the downscaling technology nodes.
- Source :
-
Microprocessors & Microsystems . Nov2015, Vol. 39 Issue 8, p1039-1051. 13p. - Publication Year :
- 2015
-
Abstract
- Negative Bias Temperature Instability (NBTI) is one of the major time-dependent degradation mechanisms that impact the reliability of advanced deeply scaled CMOS technologies. NBTI can cause workload-dependent shifts on a transistor’s threshold voltage ( V TH ), and performance during its lifetime. This study presents a comparison of the NBTI aging on adder architectures and ring oscillators in the downscaling technology nodes. The first part of the study focuses on the NBTI-induced performance degradation of 32-bit adders (one of the most fundamental block of a processor’s arithmetic logic unit) from the points of architectural topology and workload dependency in the planar technologies (i.e. commercial 28 , 45 , 65 nm nodes), while the second part investigates the energy-delay product degradation of ring oscillators beyond the planar nodes (i.e. research-grade 14 , 10 , 7 nm FinFET technology nodes for several FET channel materials, e.g. Si, SiGe, Ge, InGaAs). Results show the tight coupling between the NBTI aging and the architectural topology, run-time workload, and technology choice. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 01419331
- Volume :
- 39
- Issue :
- 8
- Database :
- Academic Search Index
- Journal :
- Microprocessors & Microsystems
- Publication Type :
- Academic Journal
- Accession number :
- 111302636
- Full Text :
- https://doi.org/10.1016/j.micpro.2015.06.008