Effects of Ti-doping on CuGaS2 thin films by co-sputtering and sulfurizing.

Titanium has been incorporated into the copper gallium disulfide (CuGaS 2 ) thin film by sulfurizing Cu-Ga-Ti precursor, which has been obtained through magnetron co-sputtering. The structure, chemical composition and optical property of the Ti-doped CuGaS 2 film were analyzed by Energy Dispersive X-ray Analysis (EDAX), field emission scanning electron microscopy (FESEM), X-ray diffraction (XRD), and ultraviolet–visible spectrophotometer. The results indicated that the Ti element has doped into CuGaS 2 thin film successfully. The crystal structure of Ti-doped CuGaS 2 thin films was single-phase chalcopyrite structure. By doping Ti element, the (112) diffraction peaks shift slightly. The optical band gap values of Ti-doped CuGaS 2 thin films were 2.30 eV and 1.92 eV with different Ti concentrations of 0.53 at% and 0.82 at%. [ABSTRACT FROM AUTHOR]