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GaN Microwave DC–DC Converters.
- Source :
-
IEEE Transactions on Microwave Theory & Techniques . Dec2015 Part 2, Vol. 63 Issue 12b, p4473-4482. 10p. - Publication Year :
- 2015
-
Abstract
- This paper presents the design and characterization of dc–dc converters operating at microwave frequencies. The converters are based on GaN transistor class-E power amplifiers (PAs) and rectifiers. Three topologies are presented, which are: 1) a PA and synchronous rectifier, requiring two RF inputs; 2) a PA and self-synchronous rectifier with a single RF input; and 3) a power oscillator with a self-synchronous rectifier with no required RF inputs. The synchronous 1.2-GHz class-\E^2 converter reaches a maximum efficiency of 72% at 4.6 W. By replacing the RF input at the rectifier gate with a specific termination, a self-synchronous circuit demonstrates 75% efficiency at 4.6 W, with a maximum output power of 13 W at 58% efficiency. In the third topology, the PA is replaced by a power oscillator by providing correct feedback for class-E operation, resulting in a circuit requiring no RF inputs. This oscillating self-synchronous dc–dc converter is demonstrated at 900 MHz with an efficiency of 79% at 28 V and 12.8-W output power. Self-synchronous class-E transistor rectifier operation is analyzed theoretically in the time domain and validated with harmonic-balance simulations using an improved nonlinear model for a GaN HEMT. The simplified theoretical analysis provides a useful starting point for high-efficiency self-synchronous power rectifier design, which can, in turn, be extended to high-efficiency oscillating power inverter design. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189480
- Volume :
- 63
- Issue :
- 12b
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Microwave Theory & Techniques
- Publication Type :
- Academic Journal
- Accession number :
- 111424188
- Full Text :
- https://doi.org/10.1109/TMTT.2015.2493519