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Sb52Se36Te12 material with high-temperature data retention coupled with rapid crystallization speed for phase change application.
- Source :
-
Applied Surface Science . Dec2015 Part A, Vol. 357, p603-607. 5p. - Publication Year :
- 2015
-
Abstract
- In this paper, Sb 52 Se 36 Te 12 is proposed for its good data retention and extremely rapid crystallization speed. Compared with usual Ge 2 Sb 2 Te 5 , Sb 52 Se 36 Te 12 exhibits a higher crystallization temperature of 196 ○ C, a better thermal stability, indicating a brilliant performance for data retention of 10 years at 121 ○ C, and a much faster switching speed, which is demonstrated by an electric pulse as short as 8 ns that can fulfil the set operation. Thus, Sb 52 Se 36 Te 12 could be expected to have a wide application in the fields of phase change memory with rapid crystallization speed and high-temperature data retention. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 01694332
- Volume :
- 357
- Database :
- Academic Search Index
- Journal :
- Applied Surface Science
- Publication Type :
- Academic Journal
- Accession number :
- 111440332
- Full Text :
- https://doi.org/10.1016/j.apsusc.2015.08.215