A strategy of combining SILAR with solvothermal process for In2S3 sensitized quantum dot-sensitized solar cells.

Pursuit of an efficient strategy for quantum dot-sensitized photoanode has been a persistent objective for enhancing photovoltaic performances of quantum dot-sensitized solar cell (QDSC). We present here the fabrication of the indium sulfide (In 2 S 3 ) quantum dot-sensitized titanium dioxide (TiO 2 ) photoanode by combining successive ionic layer adsorption and reaction (SILAR) with solvothermal processes. The resultant QDSC consists of an In 2 S 3 sensitized TiO 2 photoanode, a liquid polysulfide electrolyte, and a Co 0.85 Se counter electrode. The optimized QDSC with photoanode prepared with the help of a SILAR method at 20 deposition cycles and solvothermal method yields a maximum power conversion efficiency of 1.39%. [ABSTRACT FROM AUTHOR]