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Characterization of an Mg-implanted GaN p-i-n diode.
- Source :
-
Physica Status Solidi. A: Applications & Materials Science . Dec2015, Vol. 212 Issue 12, p2772-2775. 4p. - Publication Year :
- 2015
-
Abstract
- An Mg-implanted p-i-n diode was fabricated and characterized. Mg activation was achieved using the multicycle rapid thermal annealing technique with rapid heating pulses up to 1340 °C. The surface of the implanted GaN after annealing was smooth (0.94 nm RMS roughness) with growth steps evident as characterized by atomic force microscopy. The full width at half-maximum of the implanted GaN E2 Raman mode approaches that of the as-grown GaN after the annealing process, indicating that the annealing process is able to reverse most of the implantation damage. The Mg-implanted p-i-n diode exhibits rectification and a low leakage current of 0.11 μA cm−2 at a bias of −10 V. Under forward bias, light emission was observed from the p-i-n diode. The implantation and activation of Mg in a GaN-based device, demonstrated for the first time in this research, is a key enabling step for future optoelectronic and power electronic devices. Current-voltage characteristics of the Mg-implanted p-i-n diode with an inset of the device schematic. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 18626300
- Volume :
- 212
- Issue :
- 12
- Database :
- Academic Search Index
- Journal :
- Physica Status Solidi. A: Applications & Materials Science
- Publication Type :
- Academic Journal
- Accession number :
- 111555452
- Full Text :
- https://doi.org/10.1002/pssa.201532506