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Orientation dependent annealing kinetics of ion tracks in c-SiO2.
- Source :
-
Journal of Applied Physics . 2015, Vol. 118 Issue 22, p224305-1-224305-6. 6p. 1 Color Photograph, 4 Graphs. - Publication Year :
- 2015
-
Abstract
- The structure and thermal response of amorphous ion tracks formed along the [11̅20], [10̅10], and [0001]-directions in crystalline quartz have been investigated using small angle x-ray scattering. The radii of the ion tracks vary by about 5% (0.3 nm) for tracks along different crystallographic directions. Molecular dynamics simulations reproduce this anisotropy along the [10̅10] and [0001] directions and suggest that differences in thermal conductivity along these directions are partly responsible for this observation. Using in situ annealing, tracks along the [10̅10] and [0001] directions were shown to recrystallize during thermal annealing around 960–1020 °C with activations energies around 6 eV, while those along the [11̅20]-direction already disappeared at 640 °C with a significantly lower activation energy around 3–4 eV. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 118
- Issue :
- 22
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 111667105
- Full Text :
- https://doi.org/10.1063/1.4936601