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Influence of N2:(N2 + Ar) flow ratio and substrate temperature on the properties of zirconium nitride films prepared by reactive dc magnetron sputtering
- Source :
-
Applied Surface Science . Dec2003, Vol. 220 Issue 1-4, p367. 5p. - Publication Year :
- 2003
-
Abstract
- Preferred crystal orientation and low electrical resistivity are required for ZrNx films applied in electronic devices. In this paper, effects of N2:(<F>N2+Ar</F>) flow ratio (F(N2)) and substrate temperature on the properties of the films deposited on glass substrate by reactive dc sputtering are investigated. In a wide range of F(N2) (4–24%), the films show fcc NaCl structure. While for F(N2) in the ranges of 5–12, 12–24 and >24%, the films show (1 1 1)/(2 0 0), (1 1 1) only and amorphous structures, respectively. The electrical resistivity increases with F(N2) from 5 to 24%, and can be controlled to some extent by changing the substrate temperature. [Copyright &y& Elsevier]
- Subjects :
- *CRYSTALS
*SPUTTERING (Physics)
*ZIRCONIUM compounds
Subjects
Details
- Language :
- English
- ISSN :
- 01694332
- Volume :
- 220
- Issue :
- 1-4
- Database :
- Academic Search Index
- Journal :
- Applied Surface Science
- Publication Type :
- Academic Journal
- Accession number :
- 11174624
- Full Text :
- https://doi.org/10.1016/S0169-4332(03)00843-2