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Deterioration and recovery effects in energy responses of semiconductor X-ray detectors due to nuclear-fusion produced neutron irradiation
- Source :
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Nuclear Instruments & Methods in Physics Research Section A . Nov2003, Vol. 513 Issue 1/2, p300. 4p. - Publication Year :
- 2003
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Abstract
- Effects of neutron irradiation on X-ray energy responses of silicon semiconductor detectors have been investigated. Neutron irradiation experiments were carried out for n-type photodiode arrays utilized in the Joint European Torus (JET) using deuterium (D) beam-injection into a tritium (T) target for a well-calibrated deuterium–tritium (D–T) fusion neutron production at the Fusion Neutronics Source (FNS) facility of Japan Atomic Energy Research Institute. X-ray energy responses of these detectors are characterized before and after irradiation by the use of synchrotron radiation from a 2.5 GeV positron storage ring at the Photon Factory of High Energy Accelerator Research Organization (KEK). A recovery of the degraded X-ray energy response after the neutron irradiation has been found at fluences beyond around 1013 neutrons/cm2. A further novel finding is followed as a “re-degradation” by a neutron irradiation level over about 1014 neutrons/cm2. This “non-linear response” may be physically interpreted in terms of a type inversion from n- to p-type silicon in the detectors. Long-term observations of X-ray energy responses of the detectors after neutron irradiation have also been made in order to clarify the “annealing effect”. [Copyright &y& Elsevier]
- Subjects :
- *NEUTRON irradiation
*X-rays
*SILICON
*DETECTORS
Subjects
Details
- Language :
- English
- ISSN :
- 01689002
- Volume :
- 513
- Issue :
- 1/2
- Database :
- Academic Search Index
- Journal :
- Nuclear Instruments & Methods in Physics Research Section A
- Publication Type :
- Academic Journal
- Accession number :
- 11179707
- Full Text :
- https://doi.org/10.1016/j.nima.2003.08.151