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Ultrafast gating of a mid-infrared laser pulse by a sub-pC relativistic electron beam.
- Source :
-
Journal of Applied Physics . 2015, Vol. 118 Issue 23, p234506-1-234506-6. 6p. 1 Diagram, 4 Graphs. - Publication Year :
- 2015
-
Abstract
- In this paper we discuss a relative time-of-arrival measurement scheme between an electron beam and a mid-infrared laser pulse based on the electron-beam controlled transmission in semiconductor materials. This technique can be used as a time-stamping diagnostic in ultrafast electron diffraction or microscopy. In particular, our characterization of Germanium demonstrates that sub-ps time-ofarrival sensitivity could be achieved in a single shot and with very low charge beams (<1 pC). Detailed measurements as a function of the beam charge and the laser wavelength offer insights on the free carrier dynamics in the semiconductor upon excitation by the electron beam. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 118
- Issue :
- 23
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 111945818
- Full Text :
- https://doi.org/10.1063/1.4937401