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Quantum simulation of a heterojunction vertical tunnel FET based on 2D transition metal dichalcogenides.
- Source :
-
Solid-State Electronics . Feb2016, Vol. 116, p1-7. 7p. - Publication Year :
- 2016
-
Abstract
- We simulate a band-to-band tunneling field-effect transistor based on a vertical heterojunction of single-layer MoS 2 and WTe 2 , by exploiting the non-equilibrium Green’s function method and including electron–phonon scattering. For both in-plane and out-of-plane transport, we attempt to calibrate out models to the few available experimental results. We focus on the role of chemical doping and back-gate biasing, and investigate the off-state physics of this device by analyzing the influence of the top-gate geometrical alignment on the device performance. The device scalability as a function of gate length is also studied. Finally, we present two metrics for the switching delay and energy of the device. Our simulations indicate that vertical field-effect transistors based on transition metal dichalcogenides can provide very small values of sub-threshold swing when properly designed in terms of doping concentration and top-gate extension length. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00381101
- Volume :
- 116
- Database :
- Academic Search Index
- Journal :
- Solid-State Electronics
- Publication Type :
- Academic Journal
- Accession number :
- 112052222
- Full Text :
- https://doi.org/10.1016/j.sse.2015.11.003