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Inverse tunnel magnetoresistance in epitaxial FeCo/MgO/Fe tunnel junctions patterned by in situ shadow-masks.
- Source :
-
Journal of Alloys & Compounds . Mar2016, Vol. 662, p79-83. 5p. - Publication Year :
- 2016
-
Abstract
- Fully epitaxial FeCo/MgO/Fe magnetic tunnel junctions on silicon substrates were fabricated using in situ shadow-masks in an electron-beam deposition system. An inverse tunneling magnetoresistance (TMR) of −39% was observed at 77 K after annealing, which was not obtained in MTJs grown in better vacuum with the same device structure. This inverse TMR is attributed to the oxidation of the FeCo/MgO interface, which provides a negative spin polarization. Our work highlights the importance of interfacial properties on tunneling magnetoresistance and points to a simple processing route to achieve inverse TMR by carefully controlling the oxidation condition of the bottom layer. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 09258388
- Volume :
- 662
- Database :
- Academic Search Index
- Journal :
- Journal of Alloys & Compounds
- Publication Type :
- Academic Journal
- Accession number :
- 112311058
- Full Text :
- https://doi.org/10.1016/j.jallcom.2015.12.073