Back to Search
Start Over
Strain-induced band alignment in wurtzite/zinc-blende InAs heterostructured nanowires.
- Source :
-
Physical Review B: Condensed Matter & Materials Physics . Nov2015, Vol. 92 Issue 20, p205302-1-205302-9. 9p. - Publication Year :
- 2015
-
Abstract
- We study band alignment in wurtzite/zinc-blende polytype InAs heterostructured nanowires using temperaturedependent resonance Raman measurements. Nanowires having two different wurtzite fractions are investigated. Using visible excitation wavelengths in resonance Raman measurements, we probe the electronic band alignment of these semiconductor nanowires near a high-symmetry point of the Brillouin zone (E1 gap). The strain in the crystal structure, as revealed from the shift of the phonon mode, explains the observed band alignment at the wurtzite/zinc-blende interface. Our experimental results are further supported by electronic-structure calculations for such periodic heterostructured interface. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 10980121
- Volume :
- 92
- Issue :
- 20
- Database :
- Academic Search Index
- Journal :
- Physical Review B: Condensed Matter & Materials Physics
- Publication Type :
- Academic Journal
- Accession number :
- 112371160
- Full Text :
- https://doi.org/10.1103/PhysRevB.92.205302