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Analytical Model for the Dynamic Behavior of Triple-Gate Junctionless Nanowire Transistors.
- Source :
-
IEEE Transactions on Electron Devices . Feb2016, Vol. 63 Issue 2, p856-863. 8p. - Publication Year :
- 2016
-
Abstract
- This paper presents an analytical model for the intrinsic capacitances and transconductances of triple-gate junctionless nanowire transistors. The model is based on a surface-potential drain current model, which includes short-channel effects, and accounts for the dependences on the device dimensions, doping concentration, and quantum effects. It is validated with 3-D Technology Computer-Aided Design (TCAD) simulations for several device characteristics and biases as well as with the experimental results. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 63
- Issue :
- 2
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 112441627
- Full Text :
- https://doi.org/10.1109/TED.2015.2507571