Reliability of Au-Free AlGaN/GaN-on-Silicon Schottky Barrier Diodes Under ON-State Stress.

MLA

Tallarico, Andrea Natale, et al. “Reliability of Au-Free AlGaN/GaN-on-Silicon Schottky Barrier Diodes Under ON-State Stress.” IEEE Transactions on Electron Devices, vol. 63, no. 2, Feb. 2016, pp. 723–30. EBSCOhost, https://doi.org/10.1109/TED.2015.2507867.

APA

Tallarico, A. N., Stoffels, S., Magnone, P., Hu, J., Lenci, S., Marcon, D., Sangiorgi, E., Fiegna, C., & Decoutere, S. (2016). Reliability of Au-Free AlGaN/GaN-on-Silicon Schottky Barrier Diodes Under ON-State Stress. IEEE Transactions on Electron Devices, 63(2), 723–730. https://doi.org/10.1109/TED.2015.2507867

Chicago

Tallarico, Andrea Natale, Steve Stoffels, Paolo Magnone, Jie Hu, Silvia Lenci, Denis Marcon, Enrico Sangiorgi, Claudio Fiegna, and Stefaan Decoutere. 2016. “Reliability of Au-Free AlGaN/GaN-on-Silicon Schottky Barrier Diodes Under ON-State Stress.” IEEE Transactions on Electron Devices 63 (2): 723–30. doi:10.1109/TED.2015.2507867.