Improved artificial neural network RF noise model for MOSFETs operating in avalanche region.

An artificial neural network (ANN)-based noise model of MOSFETs for breakdown operation is presented for the first time. This ANN architecture for avalanche noise model determination is developed using a feed-forward back propagation neural network program with optimisation algorithm of Levenberg Marquardt. Good agreement between measured and simulated noise parameters is achieved in the breakdown region. This simple and accurate breakdown characterisation method based on the ANN can be applicable to noise modelling for devices operating in the breakdown region. [ABSTRACT FROM AUTHOR]