Improved phase change behavior of Sb2Se material by Si addition for phase change memory.

Compared with Sb 2 Se, Si–Sb–Se material is proved to be a promising candidate for phase change memory (PCM) use because of its higher crystallization temperature (~ 230 °C), larger crystallization activation energy (3.25 eV), and better data retention ability (168 °C for 10 years). Furthermore, the fast crystallization time 3.30 ns is obtained for Si 0.20 (Sb 2 Se) 0.80 material by the picosecond laser technique. The set switching is realized with low threshold current 6.9 μA and voltage 1.80 V, respectively. The reverse resistance transition can be achieved by an electric pulse as short as 8 ns for Si 0.20 (Sb 2 Se) 0.80 -based PCM cell. [ABSTRACT FROM AUTHOR]