Cite
Plasma-assisted ohmic contact for AlGaN/GaN heterostructure field-effect transistors.
MLA
Jiaqi Zhang, et al. “Plasma-Assisted Ohmic Contact for AlGaN/GaN Heterostructure Field-Effect Transistors.” Semiconductor Science & Technology, vol. 31, no. 3, Mar. 2016, p. 1. EBSCOhost, https://doi.org/10.1088/0268-1242/31/3/035015.
APA
Jiaqi Zhang, Lei Wang, Qingpeng Wang, Ying Jiang, Liuan Li, Huichao Zhu, & Jin-Ping Ao. (2016). Plasma-assisted ohmic contact for AlGaN/GaN heterostructure field-effect transistors. Semiconductor Science & Technology, 31(3), 1. https://doi.org/10.1088/0268-1242/31/3/035015
Chicago
Jiaqi Zhang, Lei Wang, Qingpeng Wang, Ying Jiang, Liuan Li, Huichao Zhu, and Jin-Ping Ao. 2016. “Plasma-Assisted Ohmic Contact for AlGaN/GaN Heterostructure Field-Effect Transistors.” Semiconductor Science & Technology 31 (3): 1. doi:10.1088/0268-1242/31/3/035015.