Facile Formation of High-Quality InGaN/GaN Quantum-Disks-in-Nanowires on Bulk-Metal Substrates for High-Power Light-Emitters.

MLA

Chao Zhao, et al. “Facile Formation of High-Quality InGaN/GaN Quantum-Disks-in-Nanowires on Bulk-Metal Substrates for High-Power Light-Emitters.” Nano Letters, vol. 16, no. 2, Feb. 2016, pp. 1056–63. EBSCOhost, https://doi.org/10.1021/acs.nanolett.5b04190.

APA

Chao Zhao, Tien Khee Ng, Nini Wei, Prabaswara, A., Alias, M. S., Janjua, B., Chao Shen, & Ooi, B. S. (2016). Facile Formation of High-Quality InGaN/GaN Quantum-Disks-in-Nanowires on Bulk-Metal Substrates for High-Power Light-Emitters. Nano Letters, 16(2), 1056–1063. https://doi.org/10.1021/acs.nanolett.5b04190

Chicago

Chao Zhao, Tien Khee Ng, Nini Wei, Aditya Prabaswara, Mohd S. Alias, Bilal Janjua, Chao Shen, and Boon S. Ooi. 2016. “Facile Formation of High-Quality InGaN/GaN Quantum-Disks-in-Nanowires on Bulk-Metal Substrates for High-Power Light-Emitters.” Nano Letters 16 (2): 1056–63. doi:10.1021/acs.nanolett.5b04190.