Cite
Asymmetric Underlapped Sub-10-nm n-FinFETs for High-Speed and Low-Leakage 6T SRAMs.
MLA
Akkala, Arun Goud, et al. “Asymmetric Underlapped Sub-10-Nm n-FinFETs for High-Speed and Low-Leakage 6T SRAMs.” IEEE Transactions on Electron Devices, vol. 63, no. 3, Mar. 2016, pp. 1034–40. EBSCOhost, https://doi.org/10.1109/TED.2015.2512227.
APA
Akkala, A. G., Venkatesan, R., Raghunathan, A., & Roy, K. (2016). Asymmetric Underlapped Sub-10-nm n-FinFETs for High-Speed and Low-Leakage 6T SRAMs. IEEE Transactions on Electron Devices, 63(3), 1034–1040. https://doi.org/10.1109/TED.2015.2512227
Chicago
Akkala, Arun Goud, Rangharajan Venkatesan, Anand Raghunathan, and Kaushik Roy. 2016. “Asymmetric Underlapped Sub-10-Nm n-FinFETs for High-Speed and Low-Leakage 6T SRAMs.” IEEE Transactions on Electron Devices 63 (3): 1034–40. doi:10.1109/TED.2015.2512227.