Back to Search
Start Over
Gate-Voltage Independence of Electron Mobility in Power AlGaN/GaN HEMTs.
- Source :
-
IEEE Transactions on Electron Devices . Mar2016, Vol. 63 Issue 3, p1013-1019. 7p. - Publication Year :
- 2016
-
Abstract
- The mobility of current carriers in the channel of FETs usually depends on the applied gate voltage. This paper presents experimental evidence that the electron mobility in the 2-D electron gas under the gate of AlGaN/GaN high-electron-mobility transistors (HEMTs) is actually independent of the gate voltage. This demonstration of the gate-voltage independence of the electron mobility relates to power HEMTs, and it was achieved by introducing a new method for the mobility measurement. The gate-voltage independence of the electron mobility was observed for a wide range of temperature, from 25 °C to 300 °C. Furthermore, it is confirmed that the HEMT mobility decreases with increased temperature according to the power law ( T^-k ) and with a quite high value of the power-law coefficient ( $k = 2.45$ ). [ABSTRACT FROM PUBLISHER]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 63
- Issue :
- 3
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 113411528
- Full Text :
- https://doi.org/10.1109/TED.2016.2519533